Apple chipmaker TSMC at the North America Technology Symposium has teased its next-generation A14 process node that will enter planned production in 2028. The cutting-edge A14 node will allow for ...

Abstract: The demand for progressive miniaturization of optoelectronic devices drives advancements in contemporary information technology, including edge computing, image recognition, and data ...

A floating-gate transistor forms the basic storage unit of the new device. Electrons move in and out of a charge storage space under the influence of voltage, enabling data recording. “In the past, ...

Chinese researchers have engineered Poxiao, a groundbreaking flash memory, achieving unprecedented speeds of 400 picoseconds for data erasure and rewriting. This innovation, 100,000 times faster ...

Traditional flash memory employs floating-gate transistors that need a "warm-up" phase before electrons can move efficiently. However, the Fudan research team has developed a novel method called ...

Electrons are stored in the floating gate, which then reads as charged "0" or not-charged "1." Yes, in NAND flash, a 0 means data is stored in a cell—it's the opposite of how we typically think ...

Abstract: In real-life operation, electronic devices are exposed at the same time to different sources of ionizing radiation. In this paper, we evaluate the impact of ...

“Intel manufacturing processes advance according to Moore’s Law, delivering ever more functionality and performance, improved energy efficiency and lower cost-per-transistor with ... in an optimized ...

In finFETs, the control of the current is accomplished by implementing a gate on each of the three sides of a fin. Planar technology has some issues as the technology approaches at or near 20nm. As ...